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IRF3709ZCLPBF

IRF3709ZCLPBF

For Reference Only

Part Number IRF3709ZCLPBF
PNEDA Part # IRF3709ZCLPBF
Description MOSFET N-CH 30V 87A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,668
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3709ZCLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3709ZCLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3709ZCLPBF, IRF3709ZCLPBF Datasheet (Total Pages: 12, Size: 361.13 KB)
PDFIRF3709ZCLPBF Datasheet Cover
IRF3709ZCLPBF Datasheet Page 2 IRF3709ZCLPBF Datasheet Page 3 IRF3709ZCLPBF Datasheet Page 4 IRF3709ZCLPBF Datasheet Page 5 IRF3709ZCLPBF Datasheet Page 6 IRF3709ZCLPBF Datasheet Page 7 IRF3709ZCLPBF Datasheet Page 8 IRF3709ZCLPBF Datasheet Page 9 IRF3709ZCLPBF Datasheet Page 10 IRF3709ZCLPBF Datasheet Page 11

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IRF3709ZCLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 21A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2130pF @ 15V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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