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IXFN100N50Q3

IXFN100N50Q3

For Reference Only

Part Number IXFN100N50Q3
PNEDA Part # IXFN100N50Q3
Description MOSFET N-CH 500V 82A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,374
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN100N50Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN100N50Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN100N50Q3, IXFN100N50Q3 Datasheet (Total Pages: 5, Size: 125.62 KB)
PDFIXFN100N50Q3 Datasheet Cover
IXFN100N50Q3 Datasheet Page 2 IXFN100N50Q3 Datasheet Page 3 IXFN100N50Q3 Datasheet Page 4 IXFN100N50Q3 Datasheet Page 5

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IXFN100N50Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs49mOhm @ 50A, 10V
Vgs(th) (Max) @ Id6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs255nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13800pF @ 25V
FET Feature-
Power Dissipation (Max)960W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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