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IXFN100N50Q3

IXFN100N50Q3

For Reference Only

Part Number IXFN100N50Q3
PNEDA Part # IXFN100N50Q3
Description MOSFET N-CH 500V 82A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,374
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN100N50Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN100N50Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN100N50Q3, IXFN100N50Q3 Datasheet (Total Pages: 5, Size: 125.62 KB)
PDFIXFN100N50Q3 Datasheet Cover
IXFN100N50Q3 Datasheet Page 2 IXFN100N50Q3 Datasheet Page 3 IXFN100N50Q3 Datasheet Page 4 IXFN100N50Q3 Datasheet Page 5

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IXFN100N50Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs49mOhm @ 50A, 10V
Vgs(th) (Max) @ Id6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs255nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13800pF @ 25V
FET Feature-
Power Dissipation (Max)960W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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Manufacturer

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Series

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.2mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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Operating Temperature

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STMicroelectronics

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

2650pF @ 25V

FET Feature

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Power Dissipation (Max)

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Operating Temperature

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STMicroelectronics

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FET Type

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Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6450pF @ 25V

FET Feature

-

Power Dissipation (Max)

350W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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TO-247-3

Package / Case

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BSO130P03SHXUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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FET Type

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Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 11.7A, 10V

Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3520pF @ 25V

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Power Dissipation (Max)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Package / Case

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