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IRF3707ZCSTRR

IRF3707ZCSTRR

For Reference Only

Part Number IRF3707ZCSTRR
PNEDA Part # IRF3707ZCSTRR
Description MOSFET N-CH 30V 59A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,966
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3707ZCSTRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3707ZCSTRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3707ZCSTRR, IRF3707ZCSTRR Datasheet (Total Pages: 12, Size: 369.31 KB)
PDFIRF3707ZCSTRR Datasheet Cover
IRF3707ZCSTRR Datasheet Page 2 IRF3707ZCSTRR Datasheet Page 3 IRF3707ZCSTRR Datasheet Page 4 IRF3707ZCSTRR Datasheet Page 5 IRF3707ZCSTRR Datasheet Page 6 IRF3707ZCSTRR Datasheet Page 7 IRF3707ZCSTRR Datasheet Page 8 IRF3707ZCSTRR Datasheet Page 9 IRF3707ZCSTRR Datasheet Page 10 IRF3707ZCSTRR Datasheet Page 11

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IRF3707ZCSTRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1210pF @ 15V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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