Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSL202SNL6327HTSA1

BSL202SNL6327HTSA1

For Reference Only

Part Number BSL202SNL6327HTSA1
PNEDA Part # BSL202SNL6327HTSA1
Description MOSFET N-CH 20V 7.5A TSOP-6
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSL202SNL6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSL202SNL6327HTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSL202SNL6327HTSA1 Datasheet
  • where to find BSL202SNL6327HTSA1
  • Infineon Technologies

  • Infineon Technologies BSL202SNL6327HTSA1
  • BSL202SNL6327HTSA1 PDF Datasheet
  • BSL202SNL6327HTSA1 Stock

  • BSL202SNL6327HTSA1 Pinout
  • Datasheet BSL202SNL6327HTSA1
  • BSL202SNL6327HTSA1 Supplier

  • Infineon Technologies Distributor
  • BSL202SNL6327HTSA1 Price
  • BSL202SNL6327HTSA1 Distributor

BSL202SNL6327HTSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs22mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs8.7nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1147pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSOP-6-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

The Products You May Be Interested In

IRF6785MTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 57W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MZ

Package / Case

DirectFET™ Isometric MZ

IRL620PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

800mOhm @ 3.1A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

360pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFZ40

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

28mOhm @ 31A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

PMF250XNEX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

254mOhm @ 900mA, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.65nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

81pF @ 15V

FET Feature

-

Power Dissipation (Max)

342mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70

Package / Case

SC-70, SOT-323

FDT3612

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

120mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

632pF @ 50V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA

Recently Sold

TAJE477K010RNJ

TAJE477K010RNJ

CAP TANT 470UF 10% 10V 2917

XC95144-15TQ100I

XC95144-15TQ100I

Xilinx

IC CPLD 144MC 15NS 100TQFP

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

SMBJ5.0CA

SMBJ5.0CA

TVS DIODE 5V 9.2V SMB

LM7824ACT

LM7824ACT

ON Semiconductor

IC REG LINEAR 24V 1A TO220-3

IS43TR16128D-125KBLI

IS43TR16128D-125KBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

MAMK2520T2R2M

MAMK2520T2R2M

Taiyo Yuden

FIXED IND 2.2UH 1.9A 117 MOHM

XC3S200AN-4FTG256C

XC3S200AN-4FTG256C

Xilinx

IC FPGA 195 I/O 256FTBGA

0451004.MR

0451004.MR

Littelfuse

FUSE BRD MNT 4A 125VAC/VDC 2SMD

TAJD337K010RNJ

TAJD337K010RNJ

CAP TANT 330UF 10% 10V 2917

MSS1P4-M3/89A

MSS1P4-M3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A MICROSMP

AS4C256M16D3B-12BIN

AS4C256M16D3B-12BIN

Alliance Memory, Inc.

IC DRAM 4G PARALLEL 96FBGA