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IPU80R3K3P7AKMA1

IPU80R3K3P7AKMA1

For Reference Only

Part Number IPU80R3K3P7AKMA1
PNEDA Part # IPU80R3K3P7AKMA1
Description MOSFET N-CH 800V 1.9A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 12,318
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU80R3K3P7AKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU80R3K3P7AKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPU80R3K3P7AKMA1, IPU80R3K3P7AKMA1 Datasheet (Total Pages: 13, Size: 1,225.06 KB)
PDFIPU80R3K3P7AKMA1 Datasheet Cover
IPU80R3K3P7AKMA1 Datasheet Page 2 IPU80R3K3P7AKMA1 Datasheet Page 3 IPU80R3K3P7AKMA1 Datasheet Page 4 IPU80R3K3P7AKMA1 Datasheet Page 5 IPU80R3K3P7AKMA1 Datasheet Page 6 IPU80R3K3P7AKMA1 Datasheet Page 7 IPU80R3K3P7AKMA1 Datasheet Page 8 IPU80R3K3P7AKMA1 Datasheet Page 9 IPU80R3K3P7AKMA1 Datasheet Page 10 IPU80R3K3P7AKMA1 Datasheet Page 11

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IPU80R3K3P7AKMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs5.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds120pF @ 500V
FET Feature-
Power Dissipation (Max)18W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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