IPU80R3K3P7AKMA1
For Reference Only
| Part Number | IPU80R3K3P7AKMA1 |
| PNEDA Part # | IPU80R3K3P7AKMA1 |
| Description | MOSFET N-CH 800V 1.9A TO251-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 12,318 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPU80R3K3P7AKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPU80R3K3P7AKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IPU80R3K3P7AKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 590mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.8nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 500V |
| FET Feature | - |
| Power Dissipation (Max) | 18W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V Rds On (Max) @ Id, Vgs 78mOhm @ 500mA, 8V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.6nC @ 4.5V Vgs (Max) -12V Input Capacitance (Ciss) (Max) @ Vds 228pF @ 10V FET Feature - Power Dissipation (Max) 810mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X4-DSN1006-3 Package / Case 3-XFDFN |
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 3.8Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 15pF @ 10V FET Feature - Power Dissipation (Max) 100mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package VML0806 Package / Case 3-SMD, No Lead |
