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SPD50N03S2L06GBTMA1

SPD50N03S2L06GBTMA1

For Reference Only

Part Number SPD50N03S2L06GBTMA1
PNEDA Part # SPD50N03S2L06GBTMA1
Description MOSFET N-CH 30V 50A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPD50N03S2L06GBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPD50N03S2L06GBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPD50N03S2L06GBTMA1, SPD50N03S2L06GBTMA1 Datasheet (Total Pages: 9, Size: 1,183.36 KB)
PDFSPD50N03S2L06GBTMA1 Datasheet Cover
SPD50N03S2L06GBTMA1 Datasheet Page 2 SPD50N03S2L06GBTMA1 Datasheet Page 3 SPD50N03S2L06GBTMA1 Datasheet Page 4 SPD50N03S2L06GBTMA1 Datasheet Page 5 SPD50N03S2L06GBTMA1 Datasheet Page 6 SPD50N03S2L06GBTMA1 Datasheet Page 7 SPD50N03S2L06GBTMA1 Datasheet Page 8 SPD50N03S2L06GBTMA1 Datasheet Page 9

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SPD50N03S2L06GBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2530pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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