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IPU80R2K8CEBKMA1

IPU80R2K8CEBKMA1

For Reference Only

Part Number IPU80R2K8CEBKMA1
PNEDA Part # IPU80R2K8CEBKMA1
Description MOSFET N-CH 800V 1.9A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,318
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU80R2K8CEBKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU80R2K8CEBKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPU80R2K8CEBKMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 100V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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