IPU80R1K0CEAKMA1
For Reference Only
| Part Number | IPU80R1K0CEAKMA1 |
| PNEDA Part # | IPU80R1K0CEAKMA1 |
| Description | MOSFET N-CH 800V 5.7A TO251 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,830 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPU80R1K0CEAKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPU80R1K0CEAKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IPU80R1K0CEAKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CE |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3-341 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 13A, 10V Vgs(th) (Max) @ Id 4V @ 26µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 513pF @ 25V FET Feature - Power Dissipation (Max) 68W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 15V FET Feature - Power Dissipation (Max) 58W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
