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IPU13N03LA G

IPU13N03LA G

For Reference Only

Part Number IPU13N03LA G
PNEDA Part # IPU13N03LA-G
Description MOSFET N-CH 25V 30A TO-251
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU13N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU13N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPU13N03LA G, IPU13N03LA G Datasheet (Total Pages: 12, Size: 547.14 KB)
PDFIPS13N03LA G Datasheet Cover
IPS13N03LA G Datasheet Page 2 IPS13N03LA G Datasheet Page 3 IPS13N03LA G Datasheet Page 4 IPS13N03LA G Datasheet Page 5 IPS13N03LA G Datasheet Page 6 IPS13N03LA G Datasheet Page 7 IPS13N03LA G Datasheet Page 8 IPS13N03LA G Datasheet Page 9 IPS13N03LA G Datasheet Page 10 IPS13N03LA G Datasheet Page 11

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IPU13N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1043pF @ 15V
FET Feature-
Power Dissipation (Max)46W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageP-TO251-3-1
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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