IPU103N08N3 G Datasheet
IPU103N08N3 G Datasheet
Total Pages: 9
Size: 613.82 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPU103N08N3 G
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 10.3mOhm @ 46A, 10V Vgs(th) (Max) @ Id 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
