Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPS60R650CEAKMA1

IPS60R650CEAKMA1

For Reference Only

Part Number IPS60R650CEAKMA1
PNEDA Part # IPS60R650CEAKMA1
Description CONSUMER
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,038
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS60R650CEAKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS60R650CEAKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPS60R650CEAKMA1 Datasheet
  • where to find IPS60R650CEAKMA1
  • Infineon Technologies

  • Infineon Technologies IPS60R650CEAKMA1
  • IPS60R650CEAKMA1 PDF Datasheet
  • IPS60R650CEAKMA1 Stock

  • IPS60R650CEAKMA1 Pinout
  • Datasheet IPS60R650CEAKMA1
  • IPS60R650CEAKMA1 Supplier

  • Infineon Technologies Distributor
  • IPS60R650CEAKMA1 Price
  • IPS60R650CEAKMA1 Distributor

IPS60R650CEAKMA1 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

AOTF288L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

10.5A (Ta), 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

9.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1871pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 35.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3F

Package / Case

TO-220-3 Full Pack

AO4304_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

TSM2NB60CP ROG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.4nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

249pF @ 25V

FET Feature

-

Power Dissipation (Max)

44W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQD1N80TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

195pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMTH8012LPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1949pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.6W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

Recently Sold

MT25QU512ABB8ESF-0SIT

MT25QU512ABB8ESF-0SIT

Micron Technology Inc.

IC FLASH 512M SPI 133MHZ 16SOIC

MMBT2369LT1G

MMBT2369LT1G

ON Semiconductor

TRANS NPN 15V 0.2A SOT23

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

MT41K512M16HA-125:A

MT41K512M16HA-125:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 96FBGA

BYG10D-E3/TR

BYG10D-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

PIC18F2331-I/SO

PIC18F2331-I/SO

Microchip Technology

IC MCU 8BIT 8KB FLASH 28SOIC

CM1230-02CP

CM1230-02CP

ON Semiconductor

TVS DIODE 3.3V 9.8V 4WLCSP

PIC32MX795F512L-80I/PT

PIC32MX795F512L-80I/PT

Microchip Technology

IC MCU 32BIT 512KB FLASH 100TQFP

ADG849YKSZ-REEL7

ADG849YKSZ-REEL7

Analog Devices

IC SWITCH SPDT SC70-6

RLF7030T-3R3M4R1

RLF7030T-3R3M4R1

TDK

FIXED IND 3.3UH 4.1A 17.4 MOHM

NC7SB3157P6X

NC7SB3157P6X

ON Semiconductor

IC SWITCH SPDT SC70-6

DS26521LN+

DS26521LN+

Maxim Integrated

IC TXRX T1/E1/J1 64-LQFP