Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPP80R360P7XKSA1

IPP80R360P7XKSA1

For Reference Only

Part Number IPP80R360P7XKSA1
PNEDA Part # IPP80R360P7XKSA1
Description MOSFET N-CH 800V 13A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP80R360P7XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP80R360P7XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP80R360P7XKSA1, IPP80R360P7XKSA1 Datasheet (Total Pages: 13, Size: 966.77 KB)
PDFIPP80R360P7XKSA1 Datasheet Cover
IPP80R360P7XKSA1 Datasheet Page 2 IPP80R360P7XKSA1 Datasheet Page 3 IPP80R360P7XKSA1 Datasheet Page 4 IPP80R360P7XKSA1 Datasheet Page 5 IPP80R360P7XKSA1 Datasheet Page 6 IPP80R360P7XKSA1 Datasheet Page 7 IPP80R360P7XKSA1 Datasheet Page 8 IPP80R360P7XKSA1 Datasheet Page 9 IPP80R360P7XKSA1 Datasheet Page 10 IPP80R360P7XKSA1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPP80R360P7XKSA1 Datasheet
  • where to find IPP80R360P7XKSA1
  • Infineon Technologies

  • Infineon Technologies IPP80R360P7XKSA1
  • IPP80R360P7XKSA1 PDF Datasheet
  • IPP80R360P7XKSA1 Stock

  • IPP80R360P7XKSA1 Pinout
  • Datasheet IPP80R360P7XKSA1
  • IPP80R360P7XKSA1 Supplier

  • Infineon Technologies Distributor
  • IPP80R360P7XKSA1 Price
  • IPP80R360P7XKSA1 Distributor

IPP80R360P7XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds930pF @ 500V
FET Feature-
Power Dissipation (Max)84W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

The Products You May Be Interested In

IRFR3711TRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2980pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 120W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRLD110PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

540mOhm @ 600mA, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

STB45N60DM2AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF7669L2TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 114A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 68A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5660pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET L8

Package / Case

DirectFET™ Isometric L8

PSMN7R6-60PS,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

92A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

38.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2651pF @ 30V

FET Feature

-

Power Dissipation (Max)

149W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

TVS4201MR6T1G

TVS4201MR6T1G

ON Semiconductor

TVS DIODE 5V 12V 6TSOP

BSS123

BSS123

ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23

CMS05(TE12L,Q,M)

CMS05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

CDBA540-HF

CDBA540-HF

Comchip Technology

DIODE SCHOTTKY 40V 5A DO214AC

1SMB5925BT3G

1SMB5925BT3G

ON Semiconductor

DIODE ZENER 10V 3W SMB

B1250T

B1250T

Bourns

FUSE BRD MNT 1.25A 600VAC 2SMD

FQD3P50TM

FQD3P50TM

ON Semiconductor

MOSFET P-CH 500V 2.1A DPAK

AT89S52-24PU

AT89S52-24PU

Microchip Technology

IC MCU 8BIT 8KB FLASH 40DIP

TAJB106K016RNJ

TAJB106K016RNJ

CAP TANT 10UF 10% 16V 1411

IRLML6401TRPBF

IRLML6401TRPBF

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

NLC453232T-150K-PF

NLC453232T-150K-PF

TDK

FIXED IND 15UH 450MA 700 MOHM