IPP60R099CPAAKSA1 Datasheet
IPP60R099CPAAKSA1 Datasheet
Total Pages: 11
Size: 209.99 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPP60R099CPAAKSA1
|
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 105mOhm @ 18A, 10V Vgs(th) (Max) @ Id 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 100V FET Feature - Power Dissipation (Max) 255W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
