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IRF6785MTR1PBF

IRF6785MTR1PBF

For Reference Only

Part Number IRF6785MTR1PBF
PNEDA Part # IRF6785MTR1PBF
Description MOSFET N-CH 200V 3.4A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6785MTR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6785MTR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF6785MTR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 57W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MZ
Package / CaseDirectFET™ Isometric MZ

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