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IPP052N06L3GHKSA1

IPP052N06L3GHKSA1

For Reference Only

Part Number IPP052N06L3GHKSA1
PNEDA Part # IPP052N06L3GHKSA1
Description MOSFET N-CH 60V 80A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,066
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP052N06L3GHKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP052N06L3GHKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPP052N06L3GHKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8400pF @ 30V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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