Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPI90R1K2C3XKSA2

IPI90R1K2C3XKSA2

For Reference Only

Part Number IPI90R1K2C3XKSA2
PNEDA Part # IPI90R1K2C3XKSA2
Description MOSFET N-CH 900V TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,364
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI90R1K2C3XKSA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI90R1K2C3XKSA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPI90R1K2C3XKSA2 Datasheet
  • where to find IPI90R1K2C3XKSA2
  • Infineon Technologies

  • Infineon Technologies IPI90R1K2C3XKSA2
  • IPI90R1K2C3XKSA2 PDF Datasheet
  • IPI90R1K2C3XKSA2 Stock

  • IPI90R1K2C3XKSA2 Pinout
  • Datasheet IPI90R1K2C3XKSA2
  • IPI90R1K2C3XKSA2 Supplier

  • Infineon Technologies Distributor
  • IPI90R1K2C3XKSA2 Price
  • IPI90R1K2C3XKSA2 Distributor

IPI90R1K2C3XKSA2 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

IXFR24N50Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

230mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

SPB10N10L

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

154mOhm @ 8.1A, 10V

Vgs(th) (Max) @ Id

2V @ 21µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

444pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

CXDM4060N TR

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

31mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-89

Package / Case

TO-243AA

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

17.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 12V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IRF7467

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2530pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

CAY10-330J4LF

CAY10-330J4LF

Bourns

RES ARRAY 4 RES 33 OHM 0804

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V

FQD3P50TM

FQD3P50TM

ON Semiconductor

MOSFET P-CH 500V 2.1A DPAK

N25Q064A13ESE40E

N25Q064A13ESE40E

Micron Technology Inc.

IC FLASH 64M SPI 108MHZ 8SO

R5F2L3AACNFP#V0

R5F2L3AACNFP#V0

Renesas Electronics America

IC MCU 16BIT 96KB FLASH 100QFP

PZTA92

PZTA92

ON Semiconductor

TRANS PNP 300V 0.5A SOT-223

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

LTC1569CS8-6#PBF

LTC1569CS8-6#PBF

Linear Technology/Analog Devices

IC FILTER 64KHZ LINEAR PHS 8SOIC

ILBB0805ER110V

ILBB0805ER110V

Vishay Dale

FERRITE BEAD 11 OHM 0805 1LN

MC7808CDTG

MC7808CDTG

ON Semiconductor

IC REG LINEAR 8V 1A DPAK

0001.2536

0001.2536

Schurter

FUSE CER 16A 250VAC 63VDC 3AB

DMF3Z5R5H474M3DTA0

DMF3Z5R5H474M3DTA0

Murata

CAP SUPER 470MF 5.5V 3-SMD