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HUF75637P3

HUF75637P3

For Reference Only

Part Number HUF75637P3
PNEDA Part # HUF75637P3
Description MOSFET N-CH 100V 44A TO-220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF75637P3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF75637P3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF75637P3, HUF75637P3 Datasheet (Total Pages: 10, Size: 201.65 KB)
PDFHUF75637S3_NR4895 Datasheet Cover
HUF75637S3_NR4895 Datasheet Page 2 HUF75637S3_NR4895 Datasheet Page 3 HUF75637S3_NR4895 Datasheet Page 4 HUF75637S3_NR4895 Datasheet Page 5 HUF75637S3_NR4895 Datasheet Page 6 HUF75637S3_NR4895 Datasheet Page 7 HUF75637S3_NR4895 Datasheet Page 8 HUF75637S3_NR4895 Datasheet Page 9 HUF75637S3_NR4895 Datasheet Page 10

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HUF75637P3 Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs30mOhm @ 44A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs108nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1700pF @ 25V
FET Feature-
Power Dissipation (Max)155W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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