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IPI80P04P4L06AKSA1

IPI80P04P4L06AKSA1

For Reference Only

Part Number IPI80P04P4L06AKSA1
PNEDA Part # IPI80P04P4L06AKSA1
Description MOSFET P-CH TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,444
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI80P04P4L06AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI80P04P4L06AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI80P04P4L06AKSA1, IPI80P04P4L06AKSA1 Datasheet (Total Pages: 9, Size: 305.65 KB)
PDFIPP80P04P4L06AKSA1 Datasheet Cover
IPP80P04P4L06AKSA1 Datasheet Page 2 IPP80P04P4L06AKSA1 Datasheet Page 3 IPP80P04P4L06AKSA1 Datasheet Page 4 IPP80P04P4L06AKSA1 Datasheet Page 5 IPP80P04P4L06AKSA1 Datasheet Page 6 IPP80P04P4L06AKSA1 Datasheet Page 7 IPP80P04P4L06AKSA1 Datasheet Page 8 IPP80P04P4L06AKSA1 Datasheet Page 9

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IPI80P04P4L06AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs104nC @ 10V
Vgs (Max)+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds6580pF @ 25V
FET Feature-
Power Dissipation (Max)88W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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