Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

C2M0080170P

C2M0080170P

For Reference Only

Part Number C2M0080170P
PNEDA Part # C2M0080170P
Description ZFET SIC DMOSFET, 1700V VDS, RDS
Manufacturer Cree/Wolfspeed
Unit Price Request a Quote
In Stock 8,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

C2M0080170P Resources

Brand Cree/Wolfspeed
ECAD Module ECAD
Mfr. Part NumberC2M0080170P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • C2M0080170P Datasheet
  • where to find C2M0080170P
  • Cree/Wolfspeed

  • Cree/Wolfspeed C2M0080170P
  • C2M0080170P PDF Datasheet
  • C2M0080170P Stock

  • C2M0080170P Pinout
  • Datasheet C2M0080170P
  • C2M0080170P Supplier

  • Cree/Wolfspeed Distributor
  • C2M0080170P Price
  • C2M0080170P Distributor

C2M0080170P Specifications

ManufacturerCree/Wolfspeed
SeriesC2M™
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs125mOhm @ 28A, 20V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs120nC @ 20V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 1000V
FET Feature-
Power Dissipation (Max)277W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

The Products You May Be Interested In

TK9A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

830mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

NTMFS5C670NLT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.1mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 61W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

HUFA75337S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

109nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1775pF @ 25V

FET Feature

-

Power Dissipation (Max)

175W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPD30N06S4L23ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1560pF @ 25V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

BSS215PL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

150mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 11µA

Gate Charge (Qg) (Max) @ Vgs

3.6nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

346pF @ 15V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

MAX3160EAP+T

MAX3160EAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

2EDN7424FXTMA1

2EDN7424FXTMA1

Infineon Technologies

IC GATE DRIVER DSO8

FDC6327C

FDC6327C

ON Semiconductor

MOSFET N/P-CH 20V SSOT-6

ADG1404YRUZ

ADG1404YRUZ

Analog Devices

IC MULTIPLEXER 4X1 14TSSOP

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

LTST-C190KGKT

LTST-C190KGKT

Lite-On Inc.

LED GREEN CLEAR CHIP SMD

ADP7158ACPZ-3.3-R7

ADP7158ACPZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 2A 10LFCSP

USBUF01W6

USBUF01W6

STMicroelectronics

FILTER RC(PI) 33 OHM/47PF SMD

744314150

744314150

Wurth Electronics

FIXED IND 1.5UH 13A 4.3 MOHM SMD

LPC1768FBD100,551

LPC1768FBD100,551

NXP

IC MCU 32BIT 512KB FLASH 100LQFP

APT2012SGC

APT2012SGC

Kingbright

LED GREEN CLEAR CHIP SMD

BAT54C-7-F

BAT54C-7-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V SOT23-3