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IPI80P03P405AKSA1

IPI80P03P405AKSA1

For Reference Only

Part Number IPI80P03P405AKSA1
PNEDA Part # IPI80P03P405AKSA1
Description MOSFET P-CH TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,588
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI80P03P405AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI80P03P405AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI80P03P405AKSA1, IPI80P03P405AKSA1 Datasheet (Total Pages: 9, Size: 169.11 KB)
PDFIPP80P03P405AKSA1 Datasheet Cover
IPP80P03P405AKSA1 Datasheet Page 2 IPP80P03P405AKSA1 Datasheet Page 3 IPP80P03P405AKSA1 Datasheet Page 4 IPP80P03P405AKSA1 Datasheet Page 5 IPP80P03P405AKSA1 Datasheet Page 6 IPP80P03P405AKSA1 Datasheet Page 7 IPP80P03P405AKSA1 Datasheet Page 8 IPP80P03P405AKSA1 Datasheet Page 9

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IPI80P03P405AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 253µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10300pF @ 25V
FET Feature-
Power Dissipation (Max)137W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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