Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

5HN01SS-TL-E

5HN01SS-TL-E

For Reference Only

Part Number 5HN01SS-TL-E
PNEDA Part # 5HN01SS-TL-E
Description MOSFET N-CH 50V 100MA SSFP3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,796
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

5HN01SS-TL-E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number5HN01SS-TL-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 5HN01SS-TL-E Datasheet
  • where to find 5HN01SS-TL-E
  • ON Semiconductor

  • ON Semiconductor 5HN01SS-TL-E
  • 5HN01SS-TL-E PDF Datasheet
  • 5HN01SS-TL-E Stock

  • 5HN01SS-TL-E Pinout
  • Datasheet 5HN01SS-TL-E
  • 5HN01SS-TL-E Supplier

  • ON Semiconductor Distributor
  • 5HN01SS-TL-E Price
  • 5HN01SS-TL-E Distributor

5HN01SS-TL-E Specifications

ManufacturerON Semiconductor
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device Package3-SSFP
Package / Case3-SMD, Flat Leads

The Products You May Be Interested In

TPC6011(TE85L,F,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

640pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VS-6 (2.9x2.8)

Package / Case

SOT-23-6 Thin, TSOT-23-6

IRFU48ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 37A, 10V

Vgs(th) (Max) @ Id

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1720pF @ 25V

FET Feature

-

Power Dissipation (Max)

91W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SI7107DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

10.8mOhm @ 15.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 450µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

IRLU2905ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1570pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SISH116DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

10.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8SH

Package / Case

PowerPAK® 1212-8SH

Recently Sold

CY8C24123A-24SXI

CY8C24123A-24SXI

Cypress Semiconductor

IC MCU 8BIT 4KB FLASH 8SOIC

EVQ-PAC09K

EVQ-PAC09K

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.02A 15V

W25Q64FVSSIG

W25Q64FVSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

MT40A512M16LY-075:E

MT40A512M16LY-075:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

SMBJ12CA-TR

SMBJ12CA-TR

STMicroelectronics

TVS DIODE 12V 25.3V SMB

LM393DR

LM393DR

Rohm Semiconductor

IC COMPARATOR DUAL 0.8MA 8-SOIC

CKR05BX104KR

CKR05BX104KR

CAP CER 0.1UF 50V BX RADIAL

TCN4337M016R0070

TCN4337M016R0070

CAP TANT POLY 330UF 20% 16V 2924

DS9503P+

DS9503P+

Maxim Integrated

TVS DIODE 7.5V 6TSOC

LTM4605EV#PBF

LTM4605EV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.8-16V 5A

AD8603AUJZ-REEL7

AD8603AUJZ-REEL7

Analog Devices

IC OPAMP GP 1 CIRCUIT TSOT5

EMZA250ADA101MF80G

EMZA250ADA101MF80G

United Chemi-Con

CAP ALUM 100UF 20% 25V SMD