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SPI80N03S2L-06

SPI80N03S2L-06

For Reference Only

Part Number SPI80N03S2L-06
PNEDA Part # SPI80N03S2L-06
Description MOSFET N-CH 30V 80A I2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI80N03S2L-06 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI80N03S2L-06
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI80N03S2L-06, SPI80N03S2L-06 Datasheet (Total Pages: 8, Size: 415.66 KB)
PDFSPI80N03S2L-06 Datasheet Cover
SPI80N03S2L-06 Datasheet Page 2 SPI80N03S2L-06 Datasheet Page 3 SPI80N03S2L-06 Datasheet Page 4 SPI80N03S2L-06 Datasheet Page 5 SPI80N03S2L-06 Datasheet Page 6 SPI80N03S2L-06 Datasheet Page 7 SPI80N03S2L-06 Datasheet Page 8

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SPI80N03S2L-06 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2530pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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