IPD65R250E6XTMA1
For Reference Only
Part Number | IPD65R250E6XTMA1 |
PNEDA Part # | IPD65R250E6XTMA1 |
Description | MOSFET N-CH TO252-3 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 26,724 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD65R250E6XTMA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IPD65R250E6XTMA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPD65R250E6XTMA1 Specifications
Manufacturer | Infineon Technologies |
Series | CoolMOS™ E6 |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 16.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 250mOhm @ 4.4A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 1000V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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