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IPD320N20N3GBTMA1

IPD320N20N3GBTMA1

For Reference Only

Part Number IPD320N20N3GBTMA1
PNEDA Part # IPD320N20N3GBTMA1
Description MOSFET N-CH 200V 34A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD320N20N3GBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD320N20N3GBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD320N20N3GBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2350pF @ 100V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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