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SPP21N50C3XKSA1

SPP21N50C3XKSA1

For Reference Only

Part Number SPP21N50C3XKSA1
PNEDA Part # SPP21N50C3XKSA1
Description MOSFET N-CH 500V 21A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 16,872
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPP21N50C3XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPP21N50C3XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPP21N50C3XKSA1, SPP21N50C3XKSA1 Datasheet (Total Pages: 14, Size: 751.14 KB)
PDFSPI21N50C3HKSA1 Datasheet Cover
SPI21N50C3HKSA1 Datasheet Page 2 SPI21N50C3HKSA1 Datasheet Page 3 SPI21N50C3HKSA1 Datasheet Page 4 SPI21N50C3HKSA1 Datasheet Page 5 SPI21N50C3HKSA1 Datasheet Page 6 SPI21N50C3HKSA1 Datasheet Page 7 SPI21N50C3HKSA1 Datasheet Page 8 SPI21N50C3HKSA1 Datasheet Page 9 SPI21N50C3HKSA1 Datasheet Page 10 SPI21N50C3HKSA1 Datasheet Page 11

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SPP21N50C3XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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