Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD12CN10NGBUMA1

IPD12CN10NGBUMA1

For Reference Only

Part Number IPD12CN10NGBUMA1
PNEDA Part # IPD12CN10NGBUMA1
Description MOSFET N-CH 100V 67A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,164
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD12CN10NGBUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD12CN10NGBUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPD12CN10NGBUMA1 Datasheet
  • where to find IPD12CN10NGBUMA1
  • Infineon Technologies

  • Infineon Technologies IPD12CN10NGBUMA1
  • IPD12CN10NGBUMA1 PDF Datasheet
  • IPD12CN10NGBUMA1 Stock

  • IPD12CN10NGBUMA1 Pinout
  • Datasheet IPD12CN10NGBUMA1
  • IPD12CN10NGBUMA1 Supplier

  • Infineon Technologies Distributor
  • IPD12CN10NGBUMA1 Price
  • IPD12CN10NGBUMA1 Distributor

IPD12CN10NGBUMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4320pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRFH7110TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3240pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-TQFN Exposed Pad

R6020ENZC8

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

196mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack

AON6594

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

22A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1037pF @ 15V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 39W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerSMD, Flat Leads

NTLJS1102PTBG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

36mOhm @ 6.2A, 4.5V

Vgs(th) (Max) @ Id

720mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

1585pF @ 4V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad

TK14A55D(STA4,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

550V

Current - Continuous Drain (Id) @ 25°C

14A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

370mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Recently Sold

CRA2512-FZ-R020ELF

CRA2512-FZ-R020ELF

Bourns

RES 0.02 OHM 1% 3W 2512

3224W-1-101E

3224W-1-101E

Bourns

TRIMMER 100 OHM 0.25W J LEAD TOP

3296W-1-503LF

3296W-1-503LF

Bourns

TRIMMER 50K OHM 0.5W PC PIN TOP

IHLP2525CZERR33M01

IHLP2525CZERR33M01

Vishay Dale

FIXED IND 330NH 20A 3.9 MOHM SMD

IHLP2525AHER1R0M01

IHLP2525AHER1R0M01

Vishay Dale

FIXED IND 1UH 7A 18.3 MOHM SMD

IHLP2525CZER1R0M01

IHLP2525CZER1R0M01

Vishay Dale

FIXED IND 1UH 11A 10 MOHM SMD

NFM41PC155B1H3L

NFM41PC155B1H3L

Murata

CAP FEEDTHRU 1.5UF 20% 50V 1806

2843010402

2843010402

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

S14100038

S14100038

Wurth Electronics

CMC 560UH 20A 2LN TH

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

ABM8-166-114.285MHZ-T2

ABM8-166-114.285MHZ-T2

Abracon

CRYSTAL 114.2850MHZ 18PF SMD

TZR1R080A001R00

TZR1R080A001R00

Murata

CAP TRIMMER 3-8PF 25V SMD