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NTLJS1102PTBG

NTLJS1102PTBG

For Reference Only

Part Number NTLJS1102PTBG
PNEDA Part # NTLJS1102PTBG
Description MOSFET P-CH 8V 3.7A 6-WDFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,088
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTLJS1102PTBG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTLJS1102PTBG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTLJS1102PTBG, NTLJS1102PTBG Datasheet (Total Pages: 7, Size: 119.27 KB)
PDFNTLJS1102PTBG Datasheet Cover
NTLJS1102PTBG Datasheet Page 2 NTLJS1102PTBG Datasheet Page 3 NTLJS1102PTBG Datasheet Page 4 NTLJS1102PTBG Datasheet Page 5 NTLJS1102PTBG Datasheet Page 6 NTLJS1102PTBG Datasheet Page 7

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NTLJS1102PTBG Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs36mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id720mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 4.5V
Vgs (Max)±6V
Input Capacitance (Ciss) (Max) @ Vds1585pF @ 4V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WDFN (2x2)
Package / Case6-WDFN Exposed Pad

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