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IPC60N04S4L06ATMA1

IPC60N04S4L06ATMA1

For Reference Only

Part Number IPC60N04S4L06ATMA1
PNEDA Part # IPC60N04S4L06ATMA1
Description MOSFET N-CH 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC60N04S4L06ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC60N04S4L06ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPC60N04S4L06ATMA1, IPC60N04S4L06ATMA1 Datasheet (Total Pages: 9, Size: 196.53 KB)
PDFIPC60N04S4L06ATMA1 Datasheet Cover
IPC60N04S4L06ATMA1 Datasheet Page 2 IPC60N04S4L06ATMA1 Datasheet Page 3 IPC60N04S4L06ATMA1 Datasheet Page 4 IPC60N04S4L06ATMA1 Datasheet Page 5 IPC60N04S4L06ATMA1 Datasheet Page 6 IPC60N04S4L06ATMA1 Datasheet Page 7 IPC60N04S4L06ATMA1 Datasheet Page 8 IPC60N04S4L06ATMA1 Datasheet Page 9

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IPC60N04S4L06ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-23
Package / Case8-PowerVDFN

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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