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IPC60N04S406ATMA1

IPC60N04S406ATMA1

For Reference Only

Part Number IPC60N04S406ATMA1
PNEDA Part # IPC60N04S406ATMA1
Description MOSFET N-CH 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,698
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 17 - Nov 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC60N04S406ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC60N04S406ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPC60N04S406ATMA1, IPC60N04S406ATMA1 Datasheet (Total Pages: 9, Size: 196.9 KB)
PDFIPC60N04S406ATMA1 Datasheet Cover
IPC60N04S406ATMA1 Datasheet Page 2 IPC60N04S406ATMA1 Datasheet Page 3 IPC60N04S406ATMA1 Datasheet Page 4 IPC60N04S406ATMA1 Datasheet Page 5 IPC60N04S406ATMA1 Datasheet Page 6 IPC60N04S406ATMA1 Datasheet Page 7 IPC60N04S406ATMA1 Datasheet Page 8 IPC60N04S406ATMA1 Datasheet Page 9

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IPC60N04S406ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2650pF @ 25V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-23
Package / Case8-PowerVDFN

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