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IPC60N04S406ATMA1 Datasheet

IPC60N04S406ATMA1 Datasheet
Total Pages: 9
Size: 196.9 KB
Infineon Technologies
This datasheet covers 1 part numbers: IPC60N04S406ATMA1
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IPC60N04S406ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2650pF @ 25V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-23

Package / Case

8-PowerVDFN