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SI1424EDH-T1-GE3

SI1424EDH-T1-GE3

For Reference Only

Part Number SI1424EDH-T1-GE3
PNEDA Part # SI1424EDH-T1-GE3
Description MOSFET N-CH 20V 4A SOT-363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 29,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1424EDH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1424EDH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1424EDH-T1-GE3, SI1424EDH-T1-GE3 Datasheet (Total Pages: 12, Size: 266.32 KB)
PDFSI1424EDH-T1-GE3 Datasheet Cover
SI1424EDH-T1-GE3 Datasheet Page 2 SI1424EDH-T1-GE3 Datasheet Page 3 SI1424EDH-T1-GE3 Datasheet Page 4 SI1424EDH-T1-GE3 Datasheet Page 5 SI1424EDH-T1-GE3 Datasheet Page 6 SI1424EDH-T1-GE3 Datasheet Page 7 SI1424EDH-T1-GE3 Datasheet Page 8 SI1424EDH-T1-GE3 Datasheet Page 9 SI1424EDH-T1-GE3 Datasheet Page 10 SI1424EDH-T1-GE3 Datasheet Page 11

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SI1424EDH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs33mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.56W (Ta), 2.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-363
Package / Case6-TSSOP, SC-88, SOT-363

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