IPC302N08N3X1SA1
For Reference Only
Part Number | IPC302N08N3X1SA1 |
PNEDA Part # | IPC302N08N3X1SA1 |
Description | MOSFET N-CH 80V 1A SAWN ON FOIL |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 6,480 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPC302N08N3X1SA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IPC302N08N3X1SA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPC302N08N3X1SA1 Specifications
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | Sawn on foil |
Package / Case | Die |
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