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IPA50R299CPXKSA1

IPA50R299CPXKSA1

For Reference Only

Part Number IPA50R299CPXKSA1
PNEDA Part # IPA50R299CPXKSA1
Description MOSFET N-CH 550V 12A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA50R299CPXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA50R299CPXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPA50R299CPXKSA1, IPA50R299CPXKSA1 Datasheet (Total Pages: 10, Size: 552.93 KB)
PDFIPA50R299CPXKSA1 Datasheet Cover
IPA50R299CPXKSA1 Datasheet Page 2 IPA50R299CPXKSA1 Datasheet Page 3 IPA50R299CPXKSA1 Datasheet Page 4 IPA50R299CPXKSA1 Datasheet Page 5 IPA50R299CPXKSA1 Datasheet Page 6 IPA50R299CPXKSA1 Datasheet Page 7 IPA50R299CPXKSA1 Datasheet Page 8 IPA50R299CPXKSA1 Datasheet Page 9 IPA50R299CPXKSA1 Datasheet Page 10

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IPA50R299CPXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1190pF @ 100V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

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