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IXFH6N100F

IXFH6N100F

For Reference Only

Part Number IXFH6N100F
PNEDA Part # IXFH6N100F
Description MOSFET N-CH 1000V 6A TO247
Manufacturer IXYS-RF
Unit Price Request a Quote
In Stock 3,348
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH6N100F Resources

Brand IXYS-RF
ECAD Module ECAD
Mfr. Part NumberIXFH6N100F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH6N100F, IXFH6N100F Datasheet (Total Pages: 2, Size: 107.43 KB)
PDFIXFH6N100F Datasheet Cover
IXFH6N100F Datasheet Page 2

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IXFH6N100F Specifications

ManufacturerIXYS-RF
SeriesHiPerRF™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1770pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXFH)
Package / CaseTO-247-3

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