IPB65R280E6ATMA1
For Reference Only
| Part Number | IPB65R280E6ATMA1 |
| PNEDA Part # | IPB65R280E6ATMA1 |
| Description | MOSFET N-CH TO263-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,084 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB65R280E6ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB65R280E6ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPB65R280E6ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ E6 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 175mOhm @ 7.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V FET Feature - Power Dissipation (Max) 72W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 110A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.1mOhm @ 55A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 10V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 12mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 64nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 7973pF @ 25V FET Feature - Power Dissipation (Max) 238W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
