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IPB60R099CPAATMA1

IPB60R099CPAATMA1

For Reference Only

Part Number IPB60R099CPAATMA1
PNEDA Part # IPB60R099CPAATMA1
Description MOSFET N-CH 600V 31A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,222
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB60R099CPAATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB60R099CPAATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB60R099CPAATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 100V
FET Feature-
Power Dissipation (Max)255W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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