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STQ1HNK60R-AP

STQ1HNK60R-AP

For Reference Only

Part Number STQ1HNK60R-AP
PNEDA Part # STQ1HNK60R-AP
Description MOSFET N-CH 600V 400MA TO-92
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 29,280
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 16 - Apr 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STQ1HNK60R-AP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTQ1HNK60R-AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STQ1HNK60R-AP, STQ1HNK60R-AP Datasheet (Total Pages: 16, Size: 466.35 KB)
PDFSTN1HNK60 Datasheet Cover
STN1HNK60 Datasheet Page 2 STN1HNK60 Datasheet Page 3 STN1HNK60 Datasheet Page 4 STN1HNK60 Datasheet Page 5 STN1HNK60 Datasheet Page 6 STN1HNK60 Datasheet Page 7 STN1HNK60 Datasheet Page 8 STN1HNK60 Datasheet Page 9 STN1HNK60 Datasheet Page 10 STN1HNK60 Datasheet Page 11

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STQ1HNK60R-AP Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds156pF @ 25V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

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