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IPB50R250CPATMA1

IPB50R250CPATMA1

For Reference Only

Part Number IPB50R250CPATMA1
PNEDA Part # IPB50R250CPATMA1
Description MOSFET N-CH 550V 13A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,086
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB50R250CPATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB50R250CPATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB50R250CPATMA1, IPB50R250CPATMA1 Datasheet (Total Pages: 10, Size: 552.96 KB)
PDFIPB50R250CPATMA1 Datasheet Cover
IPB50R250CPATMA1 Datasheet Page 2 IPB50R250CPATMA1 Datasheet Page 3 IPB50R250CPATMA1 Datasheet Page 4 IPB50R250CPATMA1 Datasheet Page 5 IPB50R250CPATMA1 Datasheet Page 6 IPB50R250CPATMA1 Datasheet Page 7 IPB50R250CPATMA1 Datasheet Page 8 IPB50R250CPATMA1 Datasheet Page 9 IPB50R250CPATMA1 Datasheet Page 10

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IPB50R250CPATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1420pF @ 100V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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