Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB200N15N3GATMA1

IPB200N15N3GATMA1

For Reference Only

Part Number IPB200N15N3GATMA1
PNEDA Part # IPB200N15N3GATMA1
Description MOSFET N-CH 150V 50A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 12,876
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB200N15N3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB200N15N3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB200N15N3GATMA1 Datasheet
  • where to find IPB200N15N3GATMA1
  • Infineon Technologies

  • Infineon Technologies IPB200N15N3GATMA1
  • IPB200N15N3GATMA1 PDF Datasheet
  • IPB200N15N3GATMA1 Stock

  • IPB200N15N3GATMA1 Pinout
  • Datasheet IPB200N15N3GATMA1
  • IPB200N15N3GATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB200N15N3GATMA1 Price
  • IPB200N15N3GATMA1 Distributor

IPB200N15N3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1820pF @ 75V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SPI80N03S2-03

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7020pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

2SK4085LS-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

46.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3FS

Package / Case

TO-220-3 Full Pack

STI10NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 50V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FDMC86102LZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

7A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

24mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1290pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 41W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (3.3x3.3)

Package / Case

8-PowerWDFN

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

350mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.72nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

34pF @ 20V

FET Feature

-

Power Dissipation (Max)

560mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323-3

Package / Case

SC-70, SOT-323

Recently Sold

SRP4020-2R2M

SRP4020-2R2M

Bourns

FIXED IND 2.2UH 3.9A 40 MOHM SMD

1206L110THYR

1206L110THYR

Littelfuse

PTC RESET FUSE 8V 1.1A 1206

RB481KTL

RB481KTL

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 30V UMD4

AT45DB321D-SU

AT45DB321D-SU

Adesto Technologies

IC FLASH 32M SPI 66MHZ 8SOIC

MT29F4G08ABADAH4-IT:D

MT29F4G08ABADAH4-IT:D

Micron Technology Inc.

IC FLASH 4G PARALLEL 63VFBGA

LTC1564IG#TRPBF

LTC1564IG#TRPBF

Linear Technology/Analog Devices

IC FILTR 150KHZ ANTIALIAS 16SSOP

GP2S40JJ000F

GP2S40JJ000F

Sharp Microelectronics

PHOTOINTERRUPTER REFL 6.5MM PCB

DECB33J681KC4B

DECB33J681KC4B

Murata

CAP CER 680PF 6.3KV RADIAL

0452007.MRL

0452007.MRL

Littelfuse

FUSE BRD MNT 7A 72VAC 60VDC 2SMD

EN6347QI

EN6347QI

Intel

DC DC CONVERTER 0.6-6.24V

MM74C923WM

MM74C923WM

ON Semiconductor

IC ENCODER 20-KEY 20-SOIC

DLP11TB800UL2L

DLP11TB800UL2L

Murata

CMC 100MA 2LN 80 OHM SMD