IPB200N15N3GATMA1
For Reference Only
| Part Number | IPB200N15N3GATMA1 |
| PNEDA Part # | IPB200N15N3GATMA1 |
| Description | MOSFET N-CH 150V 50A TO263-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 12,876 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB200N15N3GATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB200N15N3GATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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IPB200N15N3GATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820pF @ 75V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.7W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 350mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 34pF @ 20V FET Feature - Power Dissipation (Max) 560mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323-3 Package / Case SC-70, SOT-323 |
