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STI10NM60N

STI10NM60N

For Reference Only

Part Number STI10NM60N
PNEDA Part # STI10NM60N
Description MOSFET N-CH 600V 10A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 23,208
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI10NM60N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI10NM60N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI10NM60N, STI10NM60N Datasheet (Total Pages: 12, Size: 697.81 KB)
PDFSTI10NM60N Datasheet Cover
STI10NM60N Datasheet Page 2 STI10NM60N Datasheet Page 3 STI10NM60N Datasheet Page 4 STI10NM60N Datasheet Page 5 STI10NM60N Datasheet Page 6 STI10NM60N Datasheet Page 7 STI10NM60N Datasheet Page 8 STI10NM60N Datasheet Page 9 STI10NM60N Datasheet Page 10 STI10NM60N Datasheet Page 11

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STI10NM60N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 50V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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