Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7805ZGTRPBF

IRF7805ZGTRPBF

For Reference Only

Part Number IRF7805ZGTRPBF
PNEDA Part # IRF7805ZGTRPBF
Description MOSFET N-CH 30V 16A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7805ZGTRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7805ZGTRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7805ZGTRPBF Datasheet
  • where to find IRF7805ZGTRPBF
  • Infineon Technologies

  • Infineon Technologies IRF7805ZGTRPBF
  • IRF7805ZGTRPBF PDF Datasheet
  • IRF7805ZGTRPBF Stock

  • IRF7805ZGTRPBF Pinout
  • Datasheet IRF7805ZGTRPBF
  • IRF7805ZGTRPBF Supplier

  • Infineon Technologies Distributor
  • IRF7805ZGTRPBF Price
  • IRF7805ZGTRPBF Distributor

IRF7805ZGTRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2080pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

APT10M11JVRU2

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

142A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 71A, 10V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8600pF @ 25V

FET Feature

-

Power Dissipation (Max)

450W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

ZVP4424A

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3.5V, 10V

Rds On (Max) @ Id, Vgs

9Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±40V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 25V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

APTM20UM05SG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

317A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 158.5A, 10V

Vgs(th) (Max) @ Id

5V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

448nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

27400pF @ 25V

FET Feature

-

Power Dissipation (Max)

1136W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

Module

Package / Case

J3 Module

BSC010N04LSATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 139W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8 FL

Package / Case

8-PowerTDFN

STP60N3LH5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

8.4mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 25V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

VMMK-1218-TR1G

VMMK-1218-TR1G

Broadcom

FET RF 5V 10GHZ 0402

MAX17043G+T

MAX17043G+T

Maxim Integrated

IC 2-WIRE FG MODEL GAUGE LO BATT

AD8109ASTZ

AD8109ASTZ

Analog Devices

IC VIDEO CROSSPOINT SWIT 80LQFP

TAJA106K016RNJ

TAJA106K016RNJ

CAP TANT 10UF 10% 16V 1206

FDV303N

FDV303N

ON Semiconductor

MOSFET N-CH 25V 680MA SOT-23

AD5293BRUZ-20

AD5293BRUZ-20

Analog Devices

IC DGT POT 20KOHM 1024TP 14TSSOP

FQA140N10

FQA140N10

ON Semiconductor

MOSFET N-CH 100V 140A TO-3P

LTC4365IDDB#TRMPBF

LTC4365IDDB#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROTECT 8-DFN

2920L300/15DR

2920L300/15DR

Littelfuse

PTC RESET FUSE 15V 3A 2920

L7915CT

L7915CT

STMicroelectronics

IC REG LINEAR -15V 1.5A TO3

ESDALC5-1BM2

ESDALC5-1BM2

STMicroelectronics

TVS DIODE 5V SOD882

1N4001G

1N4001G

SMC Diode Solutions

DIODE GEN PURP 50V 1A DO41