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IPB11N03LA G

IPB11N03LA G

For Reference Only

Part Number IPB11N03LA G
PNEDA Part # IPB11N03LA-G
Description MOSFET N-CH 25V 30A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,168
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB11N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB11N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB11N03LA G, IPB11N03LA G Datasheet (Total Pages: 9, Size: 265.27 KB)
PDFIPB11N03LA G Datasheet Cover
IPB11N03LA G Datasheet Page 2 IPB11N03LA G Datasheet Page 3 IPB11N03LA G Datasheet Page 4 IPB11N03LA G Datasheet Page 5 IPB11N03LA G Datasheet Page 6 IPB11N03LA G Datasheet Page 7 IPB11N03LA G Datasheet Page 8 IPB11N03LA G Datasheet Page 9

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IPB11N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1358pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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