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IPB100N04S4H2ATMA1

IPB100N04S4H2ATMA1

For Reference Only

Part Number IPB100N04S4H2ATMA1
PNEDA Part # IPB100N04S4H2ATMA1
Description MOSFET N-CH 40V 100A TO263-3-2
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 18,516
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB100N04S4H2ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB100N04S4H2ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB100N04S4H2ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7180pF @ 25V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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