Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB093N04LGATMA1

IPB093N04LGATMA1

For Reference Only

Part Number IPB093N04LGATMA1
PNEDA Part # IPB093N04LGATMA1
Description MOSFET N-CH 40V 50A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB093N04LGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB093N04LGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB093N04LGATMA1, IPB093N04LGATMA1 Datasheet (Total Pages: 9, Size: 443.84 KB)
PDFIPB093N04LGATMA1 Datasheet Cover
IPB093N04LGATMA1 Datasheet Page 2 IPB093N04LGATMA1 Datasheet Page 3 IPB093N04LGATMA1 Datasheet Page 4 IPB093N04LGATMA1 Datasheet Page 5 IPB093N04LGATMA1 Datasheet Page 6 IPB093N04LGATMA1 Datasheet Page 7 IPB093N04LGATMA1 Datasheet Page 8 IPB093N04LGATMA1 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB093N04LGATMA1 Datasheet
  • where to find IPB093N04LGATMA1
  • Infineon Technologies

  • Infineon Technologies IPB093N04LGATMA1
  • IPB093N04LGATMA1 PDF Datasheet
  • IPB093N04LGATMA1 Stock

  • IPB093N04LGATMA1 Pinout
  • Datasheet IPB093N04LGATMA1
  • IPB093N04LGATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB093N04LGATMA1 Price
  • IPB093N04LGATMA1 Distributor

IPB093N04LGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2100pF @ 20V
FET Feature-
Power Dissipation (Max)47W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

141nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8061pF @ 50V

FET Feature

-

Power Dissipation (Max)

306W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

N0602N-S19-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

133nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7730pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 156W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Isolated Tab

IRLU3714Z

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.1nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 10V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

DMP6350SQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRF7450TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

940pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

MCP73862T-I/SL

MCP73862T-I/SL

Microchip Technology

IC LI-ION CTRLR 8.2/8.4V 16SOIC

ATSAM3X8EA-AU

ATSAM3X8EA-AU

Microchip Technology

IC MCU 32BIT 512KB FLASH 144LQFP

MLX90614ESF-DCI-000-SP

MLX90614ESF-DCI-000-SP

Melexis Technologies NV

SENSOR DGTL -40C-85C TO39

ADP191ACBZ-R7

ADP191ACBZ-R7

Analog Devices

IC CTLR HIGH LSIDE PWR SW 4WLCSP

ABM3B-25.000MHZ-B2-T

ABM3B-25.000MHZ-B2-T

Abracon

CRYSTAL 25.0000MHZ 18PF SMD

XC7Z020-2CLG484I

XC7Z020-2CLG484I

Xilinx

IC SOC CORTEX-A9 766MHZ 484BGA

MT25QU01GBBB8ESF-0SIT

MT25QU01GBBB8ESF-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 166MHZ 16SOP2

A2557SLBTR-T

A2557SLBTR-T

Allegro MicroSystems, LLC

IC DRIVER QUAD 60V 300MA 16SOIC

PIC18F6520-I/PT

PIC18F6520-I/PT

Microchip Technology

IC MCU 8BIT 32KB FLASH 64TQFP

74HC04D

74HC04D

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14SOIC

IS82C52

IS82C52

Renesas Electronics America Inc.

IC PERIPH UART/BRG 16MHZ 28-PLCC

NLC453232T-150K-PF

NLC453232T-150K-PF

TDK

FIXED IND 15UH 450MA 700 MOHM