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SI7882DP-T1-E3

SI7882DP-T1-E3

For Reference Only

Part Number SI7882DP-T1-E3
PNEDA Part # SI7882DP-T1-E3
Description MOSFET N-CH 12V 13A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,194
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7882DP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7882DP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7882DP-T1-E3, SI7882DP-T1-E3 Datasheet (Total Pages: 5, Size: 80.56 KB)
PDFSI7882DP-T1-E3 Datasheet Cover
SI7882DP-T1-E3 Datasheet Page 2 SI7882DP-T1-E3 Datasheet Page 3 SI7882DP-T1-E3 Datasheet Page 4 SI7882DP-T1-E3 Datasheet Page 5

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SI7882DP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs5.5mOhm @ 17A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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