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IPB08CNE8N G

IPB08CNE8N G

For Reference Only

Part Number IPB08CNE8N G
PNEDA Part # IPB08CNE8N-G
Description MOSFET N-CH 85V 95A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,788
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB08CNE8N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB08CNE8N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB08CNE8N G, IPB08CNE8N G Datasheet (Total Pages: 11, Size: 772.53 KB)
PDFIPI08CNE8N G Datasheet Cover
IPI08CNE8N G Datasheet Page 2 IPI08CNE8N G Datasheet Page 3 IPI08CNE8N G Datasheet Page 4 IPI08CNE8N G Datasheet Page 5 IPI08CNE8N G Datasheet Page 6 IPI08CNE8N G Datasheet Page 7 IPI08CNE8N G Datasheet Page 8 IPI08CNE8N G Datasheet Page 9 IPI08CNE8N G Datasheet Page 10 IPI08CNE8N G Datasheet Page 11

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IPB08CNE8N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.2mOhm @ 95A, 10V
Vgs(th) (Max) @ Id4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs99nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6690pF @ 40V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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