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SIA462DJ-T1-GE3

SIA462DJ-T1-GE3

For Reference Only

Part Number SIA462DJ-T1-GE3
PNEDA Part # SIA462DJ-T1-GE3
Description MOSFET N-CH 30V 12A SC-70-6L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA462DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA462DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA462DJ-T1-GE3, SIA462DJ-T1-GE3 Datasheet (Total Pages: 9, Size: 202.64 KB)
PDFSIA462DJ-T1-GE3 Datasheet Cover
SIA462DJ-T1-GE3 Datasheet Page 2 SIA462DJ-T1-GE3 Datasheet Page 3 SIA462DJ-T1-GE3 Datasheet Page 4 SIA462DJ-T1-GE3 Datasheet Page 5 SIA462DJ-T1-GE3 Datasheet Page 6 SIA462DJ-T1-GE3 Datasheet Page 7 SIA462DJ-T1-GE3 Datasheet Page 8 SIA462DJ-T1-GE3 Datasheet Page 9

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SIA462DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds570pF @ 15V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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