Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB060N15N5ATMA1

IPB060N15N5ATMA1

For Reference Only

Part Number IPB060N15N5ATMA1
PNEDA Part # IPB060N15N5ATMA1
Description MOSFET N-CH 150V 136A TO263-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB060N15N5ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB060N15N5ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB060N15N5ATMA1 Datasheet
  • where to find IPB060N15N5ATMA1
  • Infineon Technologies

  • Infineon Technologies IPB060N15N5ATMA1
  • IPB060N15N5ATMA1 PDF Datasheet
  • IPB060N15N5ATMA1 Stock

  • IPB060N15N5ATMA1 Pinout
  • Datasheet IPB060N15N5ATMA1
  • IPB060N15N5ATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB060N15N5ATMA1 Price
  • IPB060N15N5ATMA1 Distributor

IPB060N15N5ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C136A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 68A, 10V
Vgs(th) (Max) @ Id4.6V @ 180µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5300pF @ 75V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

The Products You May Be Interested In

IPC302N08N3X1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

1A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

Sawn on foil

Package / Case

Die

IRFI530GPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

IPP90N06S404AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

128nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10400pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

AO4442L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

3.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

130mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.5nC @ 4.5V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 37.5V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

SIE878DF-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PolarPAK® (L)

Package / Case

10-PolarPAK® (L)

Recently Sold

LC4256V-75T176C

LC4256V-75T176C

Lattice Semiconductor Corporation

IC CPLD 256MC 7.5NS 176TQFP

MC34063ABD

MC34063ABD

STMicroelectronics

IC REG BUCK BST ADJ 1.5A 8SO

SMAJ5.0CA-13-F

SMAJ5.0CA-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMA

PC357N4J000F

PC357N4J000F

SHARP/Socle Technology

OPTOISO 3.75KV TRANS 4-MINI-FLAT

ABM8-166-114.285MHZ-T2

ABM8-166-114.285MHZ-T2

Abracon

CRYSTAL 114.2850MHZ 18PF SMD

SMBJ7.0CA-E3/52

SMBJ7.0CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 7V 12V DO214AA

302R29W102KV4E

302R29W102KV4E

Johanson Dielectrics

CAP CER 1000PF 3KV X7R 1808

TX1475NL

TX1475NL

Pulse Electronics Network

XFRMR OCTAL 1:2/1:1 1.2MH SMD

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

BC817-40-7-F

BC817-40-7-F

Diodes Incorporated

TRANS NPN 45V 500MA SOT23-3

AS5145B-HSSM

AS5145B-HSSM

ams

ROTARY ENCODER MAGNETIC 1024PPR

SHT21

SHT21

Sensirion AG

SENSOR HUMID/TEMP 3V I2C 2% SMD