FDP027N08B
For Reference Only
| Part Number | FDP027N08B |
| PNEDA Part # | FDP027N08B |
| Description | MOSFET N-CH 80V 223A TO-220-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,200 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FDP027N08B Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDP027N08B |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FDP027N08B Specifications
| Manufacturer | ON Semiconductor |
| Series | PowerTrench® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 178nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13530pF @ 40V |
| FET Feature | - |
| Power Dissipation (Max) | 246W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 62A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2417pF @ 15V FET Feature - Power Dissipation (Max) 87W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
