IPA093N06N3GXKSA1
For Reference Only
| Part Number | IPA093N06N3GXKSA1 |
| PNEDA Part # | IPA093N06N3GXKSA1 |
| Description | MOSFET N-CH 60V 43A TO220-3-31 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,724 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 23 - Mar 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPA093N06N3GXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPA093N06N3GXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPA093N06N3GXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 34µA |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-31 Full Pack |
| Package / Case | TO-220-3 Full Pack |
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Manufacturer Panasonic Electronic Components Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 153mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id 1V @ 598µA Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 226pF @ 10V FET Feature - Power Dissipation (Max) 340mW (Ta) Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Supplier Device Package ALGA004-W-0606-RA01 Package / Case 4-XFLGA, CSP |
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Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 250Ohm @ 100µA, 20V Vgs(th) (Max) @ Id 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 15V FET Feature - Power Dissipation (Max) 375mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-72 Package / Case TO-206AF, TO-72-4 Metal Can |
